Advanced search

Filter By:

Journal Check one or more journals to show results from those journals only.
Article type Check one or more article types to show results from those article types only.
Subject Check one or more subjects to show results from those subjects only.
Date Choose a date option to show results from those dates only.

Custom date range

Clear all filters
Sort by:
Showing 1–4 of 4 results
Advanced filters: Author: Nirmaan Shanker Clear advanced filters

  • Using a three-pronged approach — spanning field-driven negative capacitance stabilization to increase intrinsic energy storage, antiferroelectric superlattice engineering to increase total energy storage, and conformal three-dimensional deposition to increase areal energy storage density — very high electrostatic energy storage density and power density are reported in HfO2–ZrO2-based thin film microcapacitors integrated into silicon.

    • Suraj S. Cheema
    • Nirmaan Shanker
    • Sayeef Salahuddin
    Research
    Nature
    Volume: 629, P: 803-809

  • In the standard Si transistor gate stack, replacing conventional dielectric HfO2 with an ultrathin ferroelectric–antiferroelectric HfO2–ZrO2 heterostructure exhibiting the negative capacitance effect demonstrates ultrahigh capacitance without degradation in leakage and mobility, promising for ferroelectric integration into advanced logic technology.

    • Suraj S. Cheema
    • Nirmaan Shanker
    • Sayeef Salahuddin
    Research
    Nature
    Volume: 604, P: 65-71

  • Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic layer deposition, even at thicknesses of just one nanometre.

    • Suraj S. Cheema
    • Daewoong Kwon
    • Sayeef Salahuddin
    Research
    Nature
    Volume: 580, P: 478-482