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Showing 1–12 of 12 results
Advanced filters: Author: Qundong Fu Clear advanced filters

  • The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.

    • Xiaowei Wang
    • Peng Yu
    • Zheng Liu
    ResearchOpen Access
    Nature Communications
    Volume: 10, P: 1-8

  • Monolayer amorphous carbon (a-C) has attracted attention due to its structural and electronic properties, but its synthesis has so far required the use of metal substrates. Here, the authors report the Te-assisted growth of large-scale 2D a-C patterns on various insulating substrates, confirming their insulating properties in quantum tunnelling devices.

    • Ya Deng
    • Zihao Wang
    • Zheng Liu
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-9

  • Transition metal dichalcogenide nanotubes possess symmetry-breaking properties promising for fundamental physics research. Here, the authors report a direct synthesis of crystalline MoS2 nanotubes exhibiting strong polarization and bulk photovoltaic effects.

    • Lei Luo
    • Yao Wu
    • Zheng Liu
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-10

  • The authors demonstrate quantum Hall effect in semiconducting layered oxide Bi2O2Se. Its unique low mass among the oxides of 0.14 me and pronounced layered structure makes Bi2O2Se highly susceptible to the quantum confinement effects.

    • Oleksandr Zheliuk
    • Yuliia Kreminska
    • Uli Zeitler
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-7

  • The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals.

    • Xiaowei Wang
    • Chao Zhu
    • Zheng Liu
    ResearchOpen Access
    Nature Communications
    Volume: 12, P: 1-8

  • Two-dimensional magnets with intrinsic ferromagnetic/antiferromagnetic ordering are highly desirable for future spintronic devices. Here, the authors demonstrate a chemical vapor deposition approach to controllably grow ultrathin FeTe crystals with antiferromagnetic tetragonal and ferromagnetic hexagonal phase, showing a thickness-dependent magnetic transition.

    • Lixing Kang
    • Chen Ye
    • Zheng Liu
    ResearchOpen Access
    Nature Communications
    Volume: 11, P: 1-9

  • Layer dependence is an important aspect to properties of van der Waals materials. Here, the authors obtain layer dependent multiple polarization states in 3 R MoS2 and propose a generalized model to describe their ferroelectric switching processes.

    • Peng Meng
    • Yaze Wu
    • Fucai Liu
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-10

  • A heterodimensional superlattice consisting of an alternating array of a two-dimensional material and a one-dimensional material shows unconventional octahedral stacking and an unexpected room-temperature anomalous Hall effect.

    • Jiadong Zhou
    • Wenjie Zhang
    • Zheng Liu
    Research
    Nature
    Volume: 609, P: 46-51

  • Few-nanometre-thick flakes of trigonal and monoclinic Cr5Te8 can be grown using chemical vapour deposition, with the monoclinic phase exhibiting an anomalous Hall conductivity of 650 Ω–1 cm–1 and anomalous Hall angle of 5%.

    • Bijun Tang
    • Xiaowei Wang
    • Zheng Liu
    Research
    Nature Electronics
    Volume: 5, P: 224-232

  • Molten-salt-assisted chemical vapour deposition is used to synthesize a wide variety of two-dimensional transition-metal chalcogenides.

    • Jiadong Zhou
    • Junhao Lin
    • Zheng Liu
    Research
    Nature
    Volume: 556, P: 355-359