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Showing 1–11 of 11 results
Advanced filters: Author: Romain Maurand Clear advanced filters

  • Silicon is a promising material for realization of quantum processors, particularly as it could be naturally integrated with classical control hardware based on CMOS technology. Here the authors report a silicon qubit device made with an industry-standard fabrication process on a CMOS platform.

    • R. Maurand
    • X. Jehl
    • S. De Franceschi
    ResearchOpen Access
    Nature Communications
    Volume: 7, P: 1-6

  • Exploiting the optics-like dynamics of low-energy electronic excitations in graphene requires the challenging combination of ballistic transport and complex gating. Here the fabrication and characterization of suspended graphene p–njunctions is reported, paving the way for future electron optics experiments.

    • Peter Rickhaus
    • Romain Maurand
    • Christian Schönenberger
    Research
    Nature Communications
    Volume: 4, P: 1-6

  • Strong intrinsic spin–orbit interaction unlocks the potential of circuit quantum electrodynamics with hole spins in silicon, resulting in strong spin–photon coupling of 300 MHz.

    • Cécile X. Yu
    • Simon Zihlmann
    • Romain Maurand
    Research
    Nature Nanotechnology
    Volume: 18, P: 741-746

  • Snake states describe electron trajectories that curve along an interface where the charge is inverted. Here, the authors investigate electronic transport in a ballistic graphene p–n junction and observe striking conductance oscillations that are a signature of these unusual states.

    • Peter Rickhaus
    • Péter Makk
    • Christian Schönenberger
    ResearchOpen Access
    Nature Communications
    Volume: 6, P: 1-6

  • Gate-reflectometry is a recently demonstrated measurement technique for single spin states in silicon. It is potentially able to perform quantum non-demolition measurements and uses compact circuitry that can be scaled up to larger quantum computers. Crippa et al. successfully combine gate-reflectometry qubit readout and coherent control.

    • A. Crippa
    • R. Ezzouch
    • S. De Franceschi
    ResearchOpen Access
    Nature Communications
    Volume: 10, P: 1-6

  • Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits.

    • Romain Maurand
    • Xavier Jehl
    News & Views
    Nature Electronics
    Volume: 5, P: 131-132

  • Gate reflectometry on an ancillary dot coupled to an electron reservoir is used to read the spin of a qubit in a CMOS device in a single shot with an average fidelity above 98% within 0.5 ms.

    • Matias Urdampilleta
    • David J. Niegemann
    • Tristan Meunier
    Research
    Nature Nanotechnology
    Volume: 14, P: 737-741

  • Hybrid superconductor-semiconductor circuits have recently garnered attention for various applications. Here, the authors use a semiconductor heterostructure with a high-mobility Ge channel to create a Josephson device, where the supercurrent is mainly carried by Cooper pairs, crucial for parity-protected qubits.

    • Axel Leblanc
    • Chotivut Tangchingchai
    • François Lefloch
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-7

  • Operation sweet spots decouple hole spin qubits in silicon from charge noise while conserving full electrical control and allowing for spin coherence times of up to 88 μs.

    • N. Piot
    • B. Brun
    • S. De Franceschi
    ResearchOpen Access
    Nature Nanotechnology
    Volume: 17, P: 1072-1077