Filter By:

Journal Check one or more journals to show results from those journals only.

Choose more journals

Article type Check one or more article types to show results from those article types only.
Subject Check one or more subjects to show results from those subjects only.
Date Choose a date option to show results from those dates only.

Custom date range

Clear all filters
Sort by:
Showing 1–13 of 13 results
Advanced filters: Author: Roman Engel-Herbert Clear advanced filters
  • The intrinsic properties of conventional semiconductors limits the speed and efficiency of field-effect transistors. Here, the authors take advantage of the insulator-to-metal transition in vanadium dioxide to create a transistor with reversible and steep-slope switching at room temperature.

    • Nikhil Shukla
    • Arun V. Thathachary
    • Suman Datta
    ResearchOpen Access
    Nature Communications
    Volume: 6, P: 1-6
  • A correlated material SrVO3 has been considered to be a Fermi liquid, however previous studies have been limited to disordered samples. Here the authors study transport in ultraclean films of SrVO3, finding deviations from the Fermi liquid picture.

    • Matthew Brahlek
    • Joseph D. Roth
    • Roman Engel-Herbert
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-9
  • New findings suggest that the mechanical stretching of layered crystals can transform them from a polar to a nonpolar state. This could spur the design of multifunctional materials controlled by an electric field.

    • Venkatraman Gopalan
    • Roman Engel-Herbert
    News & Views
    Nature Materials
    Volume: 15, P: 928-930
  • Quantum transport phenomena have been widely investigated in semiconducting compounds, but extending these studies to oxides is not simple owing to their low mobilities. It is now demonstrated that SrTiO3 films can be grown by molecular beam epitaxy; the films show very high electron mobility, opening the way to oxide heterostructures with excellent transport properties.

    • Junwoo Son
    • Pouya Moetakef
    • Susanne Stemmer
    Research
    Nature Materials
    Volume: 9, P: 482-484
  • Precise valence state control to avoid performance deterioration in transition metal oxide films has proved challenging. Here, the authors establish a combinatorial approach to create a valence state library of VO2, allowing for the growth of wafer size VO2thin films.

    • Hai-Tian Zhang
    • Lei Zhang
    • Roman Engel-Herbert
    ResearchOpen Access
    Nature Communications
    Volume: 6, P: 1-8
  • The vibrational states emerging at the interface in oxide superlattices are characterized theoretically and at atomic resolution, showing the impact of material length scales on structure and vibrational response.

    • Eric R. Hoglund
    • De-Liang Bao
    • James M. Howe
    ResearchOpen Access
    Nature
    Volume: 601, P: 556-561
  • A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.

    • Jason Lapano
    • Matthew Brahlek
    • Roman Engel-Herbert
    ResearchOpen Access
    Nature Communications
    Volume: 10, P: 1-7
  • Electronic many-body effects are used to control the electron effective mass, and thus the plasma energy and electrical conductivity, of thin films of the correlated metals SrVO3 and CaVO3, making them good candidates as transparent conductors.

    • Lei Zhang
    • Yuanjun Zhou
    • Roman Engel-Herbert
    Research
    Nature Materials
    Volume: 15, P: 204-210
  • Optically transparent electrodes with high electrical conductance are essential for the implementation of optoelectronics, but current technology performs poorly in the ultraviolet regime. Here, SrNbO3 is proposed as an alternative material due to its high figure of merit in the ultraviolet range.

    • Yoonsang Park
    • Joseph Roth
    • Roman Engel-Herbert
    ResearchOpen Access
    Communications Physics
    Volume: 3, P: 1-7