Cai et al. report gate-injection-mode floating-gate memories based on MoS2 channel. The coplanar device design and bi-pulse state programming enable 8-bit conductance states at 3 V. Image convolutions are implemented and 38,592 convolutional kernel parameters are projected on a 9 × 2 device array.
- Yuchen Cai
- Jia Yang
- Zhenxing Wang
