This paper finds an unusually large magnetoresistance — dependence of electrical resistance on magnetic field — of 1,000% at room temperature in a simple device based on lightly doped silicon between two non-magnetic metallic contacts. The size of the effect is comparable to that of 'colossal magnetoresistance' found in certain magnetic systems, although the underlying mechanism is very different. The observed magnetoresistance effect could be used to develop new magnetic devices based on silicon.
- Michael P. Delmo
- Shinpei Yamamoto
- Kensuke Kobayashi
