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Showing 1–2 of 2 results
Advanced filters: Author: Wan-Yu Lyu Clear advanced filters
  • The authors report a vacancy engineering method to simultaneously optimize carrier concentration and maintain high plasticity, achieving a nearly 10% strain in three-point bending tests and a high ZT of ~0.83 at 343 K in (AgCu)0.998Te0.8Se0.1S0.1.

    • Nan-Hai Li
    • Xiao-Lei Shi
    • Zhi-Gang Chen
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-11
  • The authors report a wet-chemical selenization-based anisotropy optimization to control the orientation of the Ag2Se thin film, achieving a power factor of 30.8 μW cm−1 K−2 in the thin film and a normalized power density of 1.8 μW cm−2 K−2 in the device.

    • Tianyi Cao
    • Xiao-Lei Shi
    • Zhi-Gang Chen
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-13