The insertion of thin layers of cobalt can stabilize β-tungsten under back-end-of-line thermal constraints, allowing a 64-kb spin–orbit torque magnetic random-access memory to be fabricated that offers a spin–orbit torque switching of 1 ns, data retention of more than 10 years and a tunnelling magnetoresistance of 146%.
- Yen-Lin Huang
- MingYuan Song
- Xinyu Bao
