Achieving stable p-type doping in MoS₂ is crucial for enabling complementary logic circuits but remains substantially more challenging than n-type doping. Here, the authors demonstrate metal-organic chemical vapor deposition growth of wafer-scale Nb-doped MoS₂ films with uniform p-type behavior, offering a thermodynamic-kinetic model for doping control, thereby advancing scalable 2D materials for low-power, flexible electronics.
- Zhenyu Wang
- Zhiwei Yao
- Jianhua Zhang
