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Showing 1–7 of 7 results
Advanced filters: Author: Yury Yu. Illarionov Clear advanced filters

  • The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    News & Views
    Nature Electronics
    Volume: 3, P: 442-443

  • Hysteresis in the transfer characteristics of 2D transistors is considered an important metric to evaluate their performance, but its characterization process is often inconsistent among different studies. Here, the authors propose a standardized scheme to measure and analyze hysteresis in different 2D devices, facilitating systematic comparisons and performance projections.

    • Alexander Karl
    • Axel Verdianu
    • Tibor Grasser
    ResearchOpen Access
    Nature Communications
    Volume: 17, P: 1-15

  • Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    News & Views
    Nature Electronics
    Volume: 4, P: 870-871

  • The stability of graphene-based field-effect transistors with amorphous aluminium oxide serving as the top-gate oxide can be improved by tuning the Fermilevel of the two-dimensional channel material such that it maximizes the energy distance between the charge carriers in the channel and the defect bands in the gate oxide.

    • Theresia Knobloch
    • Burkay Uzlu
    • Tibor Grasser
    ResearchOpen Access
    Nature Electronics
    Volume: 5, P: 356-366

  • The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D technologies.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    ReviewsOpen Access
    Nature Communications
    Volume: 11, P: 1-15

  • This Perspective assesses the performance limits of hexagonal boron nitride when used as a gate insulator in complementary metal–oxide–semiconductor (CMOS) devices based on two-dimensional materials, concluding that due to excessive leakage currents, the material is unlikely to be suitable for use in ultrascaled CMOS devices.

    • Theresia Knobloch
    • Yury Yu. Illarionov
    • Tibor Grasser
    Reviews
    Nature Electronics
    Volume: 4, P: 98-108