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Technology breakthroughs at the 2024 IEEE International Electron Devices Meeting, which this year has a focus on shaping tomorrow’s semiconductor technology.
This Review examines the development of haptic and wearable technologies that could be used to build a more realistic and immersive metaverse, exploring the potential applications of such technology and the ethical and technological challenges that the field faces.
A hybrid optoelectronic synthesizer is developed that combines simplified optical frequency division with direct digital synthesis to generate tunable, low-phase-noise microwaves across the X-band. This approach also achieves high frequency stability while reducing the size, weight and power demands, paving the way for chip-scale photonic microwave sources.
The multiple layers in electrochromic displays complicate the device structure and fabrication. Now, a transparent conductive polymer is shown to be both an effective conductor and ion-storage layer, enabling the fabrication of flexible, all-polymer electrochromic displays with a simplified device architecture.
A conductive transparent polymer, which can function as both a conductor and an ion-storage layer, can be combined with a solid-state electrolyte to make flexible, transmissive, all-polymer electrochromic displays.
A simulation framework for three-dimensionally structured transistors based on two-dimensional materials shows that they could be used to continue complementary metal–oxide–semiconductor scaling with performance and energy enhancements.
This Perspective examines the development of safe, secure and trustworthy compute-in-memory accelerators, exploring vulnerabilities specific to such accelerators and discussing the security opportunities of the systems.
A synthesizer that combines a fixed low-noise photonic oscillator and a direct digital synthesizer—and is based on components that can all be integrated on chip—can create microwave signals that are tunable with low noise.
The monolithic integration of ultrasound transducers using CMOS back-end-of-line processes is a promising route to introduce micromachined sensors into commercial foundries.
Measurements of the quantum anomalous Hall effect in a magnetically doped topological insulator to an accuracy of a few parts in 109 at zero magnetic field show that the system could provide a new type of quantum standard of resistance.
When subjected to high magnetic fields and low temperatures, windowed two-dimensional contacts can be used to probe fractional quantum Hall states in n-type high-mobility molybdenum disulfide transistors.
Carbon nanotube field-effect transistors with a high transconductance can be fabricated using dense arrays of nanotubes and a directly grown gate dielectric that conformably coats the nanotube array.
