Reflection anisotropy spectroscopy has long been used to explore surface optical properties, yet the origins of bulk-related features remain contentious. Here, the authors introduce a layer-resolved exciton localization measure within many-body perturbation theory to reveal that these bulk features in arsenic-modified silicon are primarily due to surface-localized states, challenging traditional views and highlighting the role of excitonic contributions.
- Max Großmann
- Kai Daniel Hanke
- Erich Runge