A voltage-induced symmetry change in a ferromagnetic material can change its magnetization or magnetic anisotropy, but these effects are too weak to be used in memory devices. Researchers have now shown that a relatively small electric field can cause a large change in the magnetic anisotropy of a few atomic layers of iron. The results could lead to low-power logic devices and non-volatile memory cells.
- T. Maruyama
- Y. Shiota
- Y. Suzuki
