The inevitable forming process at high voltages and the low durability of α-C:Ox-based resistive memories limit their use in memory-centric computing systems. We demonstrated highly reliable forming-free Cu-doped α-C:Ox resistive memories via a hybrid conducting path consisting of conductive sp² covalent bonds and Cu filaments, significantly suggesting the advancements and feasibility of carbon-based electronic devices in memory-centric computing systems.
- Dae-Seong Woo
- Soo-Min Jin
- Jea-Gun Park
