Fig. 2: Simulated resonance characteristics of S-BAR.
From: A wafer-level sealed silicon cavity microacoustic platform for radio frequency integration
a Admittance response of S-BAR with second-order mode enhancement. b Simulated stress distributions of S-BARs with different thickness ratios. c \({k}_{t}^{2}\) vs. thickness ratio of AlScN to the whole film
