Table 1 Comparison with other published results
From: A wafer-level sealed silicon cavity microacoustic platform for radio frequency integration
Reference | fs (GHz) | Qmax | \({k}_{t}^{2}\) | TCF (ppm/K) | Piezoelectric material | Process type | Subsequent fabrication compatibility |
|---|---|---|---|---|---|---|---|
P3F* FBAR38 | 55.7 | 60 | 4.2% | – | AlN/AlScN/AlN | Releasing | No |
P3F* FBAR39 | 20.02 | 166 | 8.5% | – | 3-layer AlScN | Sacrificial Layer | No |
P3F* XBAW40 | 10.72 | 789 | 10% | – | 2-layer AlN | – | – |
XBAW41 | 5.2 | 2136 | 6.26% | – | Crystalline AlN | Thin Film Transfer | – |
FBAR42 | 2.596 | 1904 | 6.39% | – | Crystalline AlN | Thin Film Transfer | – |
FBAR24 | – | – | 35% | −45 | Al0.59Sc0.41N | – | – |
FBAR37 | 4.3 | 318 | 14.5% | −19.2 | Al0.8Sc0.2N | Sacrificial Layer | No |
C-BAR35 | 2.47 | 536 | 9.57% | −16.9 | Al0.7Sc0.3N | Backside Etching | No |
FBAR43 | 2.2 | 600 | 26% | −45 | LiNbO3 | Sacrificial Layer | No |
This work S-BAR | 3.81 | 363 | 4.94% | – | Al0.75Sc0.25N | Sealed Silicon Cavity | Yes |
4.48 | 110 | 9.53% | – | ||||
5.15 | 116 | 9.35% | −11.44 |
