Fig. 2: The characterization of GST-integrated CR. | Microsystems & Nanoengineering

Fig. 2: The characterization of GST-integrated CR.

From: Dynamic dual-mode terahertz device with nonvolatile switching for integrated on-chip and free-space applications

Fig. 2

a Schematic diagram of G-CR meta-atom, with r, w, α, θ representing outer radius, line width, orientation angle, and opening angle of CR structure, respectively. b Simulated amplitude and phase of cross-polarized terahertz waves transmitted through CRs with Px = Py = 80 μm, r ranging from 35 μm to 39.5 μm, w ranging from 5 μm to 8.5 μm, α ranging from 5° to 120°, θ ranging from −45° to 45°. The simulation was carried out at 0.7 THz. c Simulated cross-polarized terahertz transmission of G-CR structure with different GST conductivities: 0, 2000, 5000, 10,000, 1,00,000, 3,00,000 S/m. The geometrical parameters of CR are fixed at r = 37 μm, w = 8 μm, α = 70°, θ = 40°. d Measured terahertz transmission at 0.7 THz of reamorphized and the corresponding recrystallized GST layer at a 130 mJ/cm2 pump energy over 20 switching cycles

Back to article page