Fig. 6: Experimental characterization of non-volatile reconfigurable terahertz FF and NF modulation device II. | Microsystems & Nanoengineering

Fig. 6: Experimental characterization of non-volatile reconfigurable terahertz FF and NF modulation device II.

From: Dynamic dual-mode terahertz device with nonvolatile switching for integrated on-chip and free-space applications

Fig. 6

Normalized terahertz intensity distribution on the a x–y plane 75 μm above the sample and b FF hologram imaging plane under the amorphous GST. c Extracted normalized intensity profiles along the white dash lines in (a) and (d). Normalized terahertz intensity distribution on the d x–y plane 75 μm above the sample and (e) FF hologram imaging plane under the crystalline GST, with the corresponding phase profile depicted in (f). g–l Same characterization results with a–f, respectively, for reamorphized and recrystallized GST

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