Fig. 5: Structure and electrical performance of the programmable diode.
From: Polarity control of 2D semiconductor for reconfigurable electronics
a Optical image and b schematic diagram of the programmable diode. c I–V characteristics of the diode changing from a p-n to an n-p junction after applying negative and positive pulses to PG1 and PG2, respectively. d Current rectification ratio |I+/I-| for the diode shown in c. e I–V characteristics of the diode reversing from an n-p to a p-n junction after applying opposite pulses. f Current rectification ratio |I+/I-| for the diode shown in e. All voltage pulses are applied with a duration of 8 s
