Fig. 6: Molecular diode/rectifier.
From: Molecular electronic devices based on atomic manufacturing methods
a 1,8-Nonodiyne: Chemical structure and self-assembled monolayer formation on H-Si via UV-assisted hydrosilylation (left) and current-voltage properties of single-nonadiyne junctions (right), reproduced from ref.242, copyright 2017, with permission from Springer Nature. b Schematic representation of the 2-Ru-N ITO-molecule-ITO junction (left) and logarithmically binned RR for the humid case (right), reproduced from ref.243, copyright 2018, with permission from Springer Nature. c Schematic of alkanethiolate SAMs: SC11Fc (ferrocene headgroup) vs. Fc-free controls (SC10CH3, SC14CH3) for charge transport, reproduced from ref.74, copyright 2009, with permission from American Chemical Society. d Schematic of Ag-SAM//GaOx/EGaIn junction (left) and J (V) curve with R1/R2 conductance states and W/R/E voltages (right), reproduced from ref.247, copyright 2020, with permission from Springer Nature. e Schematic of MoS₂|MPc heterojunction via electrostatic adsorption (left) and J(V) rectification curves for MoS₂|MPc vs. MPc|MoS₂ with single molecule magnets alignment-induced orbital modulation (right), reproduced from ref.251, copyright 2017, with permission from Royal Society of Chemistry. f Representative I-V characteristics (left) and statistical histograms of RR for OPT2/1L-MoS2 and OPT2/1L-WSe2 junctions (right), reproduced from ref.252, copyright 2020, with permission from Springer Nature. g Schematic representation of the gMCBJ principle (left) and Scanning electron micrographs of a gMCBJ sample (right). h I–V characteristics (left) and corresponding gate-induced rectification ratio modulation (right) at different gate voltages. g, h reproduced from ref.253, copyright 2016, with permission from Royal Society of Chemistry
