Fig. 4: Etch rate characteristics of AlN and AlScN films, and sidewall profiles of AlScN films. | Microsystems & Nanoengineering

Fig. 4: Etch rate characteristics of AlN and AlScN films, and sidewall profiles of AlScN films.

From: Recent progress in aluminum nitride for piezoelectric MEMS mirror applications: enhancements with scandium doping

Fig. 4

a Graph of ICP etch rate for pure AlN and AlScN films with varying Sc concentrations84. b Graph of KOH etch rate for AlScN films as a function of Sc concentration87. Scanning electron microscope (SEM) images of c the sidewall angle of an AlScN film etched by KOH, d the sidewall angle of an AlScN film etched by TMAH88, e residues remaining after TMAH etching, and f undercut observed after TMAH etching

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