Table 2 Characteristics of AlScN films depending on deposition methods
Deposition method | Sc-concentration [%] | Piezoelectric coefficient (d33) | FWHM | Thickness of AlScN | Substrate | Ref. |
|---|---|---|---|---|---|---|
DC reactive magnetron sputtering | 27 | 8.91 pm/V | <2° | 500 nm | AlN/Pt/Ti | |
DC reactive magnetron sputtering | 6 | - | 0.31° | 758 nm | Si | |
AC-powered dual- cathode S-gun magnetron sputtering | 30 | - | 1.58° | 1000 nm | Mo/Si | |
Pulse DC reactive magnetron sputtering | 13 | −12.3 pC/N | <2° | 900–1200 nm | Si | |
Pulse DC reactive magnetron sputtering | 22 | −12.8 pC/N | 1.95° | 500 nm | Si | |
Unipolar-bipolar hybrid pulse mode reactive magnetron sputtering | 29.5 | 11–12 pm/V | 2.2° | 2500 nm | Pt/Ti/Si |