Table 2 Characteristics of AlScN films depending on deposition methods

From: Recent progress in aluminum nitride for piezoelectric MEMS mirror applications: enhancements with scandium doping

Deposition method

Sc-concentration [%]

Piezoelectric coefficient (d33)

FWHM

Thickness of AlScN

Substrate

Ref.

DC reactive magnetron sputtering

27

8.91 pm/V

<2°

500 nm

AlN/Pt/Ti

136

DC reactive magnetron sputtering

6

-

0.31°

758 nm

Si

137

AC-powered dual- cathode S-gun magnetron sputtering

30

-

1.58°

1000 nm

Mo/Si

81

Pulse DC reactive magnetron sputtering

13

−12.3 pC/N

<2°

900–1200 nm

Si

83

Pulse DC reactive magnetron sputtering

22

−12.8 pC/N

1.95°

500 nm

Si

75

Unipolar-bipolar hybrid pulse mode reactive magnetron sputtering

29.5

11–12 pm/V

2.2°

2500 nm

Pt/Ti/Si

74