Table 4 Comparative summary of MEMS micromirrors based on piezoelectric AlScN, including three-level and single-layer constructions

From: Recent progress in aluminum nitride for piezoelectric MEMS mirror applications: enhancements with scandium doping

Year

Author(s)

Piezoelectric material

Mirror plate area

Chip size (mm2)

1DOF

Scanning mode

Resonant frequency (Hz)

2FoM

3Drive voltage

4Optical scan angle

2020

Gu-Stoppel et al.60.

Al0.76Sc0.24N

D = 0.8 mm

1.1 × 1.3

TT

Quasi-static

(X) 700

(Y) 790

28

150 VDC

56°

2021

Gu-Stoppel et al.114.

AlScN

D = 10 mm

11 × 11

TT

Quasi-static

98

817

150 VDC

510.4°

2023

Hwang et al.115.

AlScN

D = 2 mm

8 × 8

TT

Quasi-static

Resonant

(X) 621.3

(Y) 632.5

33

32

±20 VDC

0.25 Vpeak

10.4°

(X) 11° / (Y) 16°

2024

Hwang et al.116.

AlScN

D = 2 mm

11 × 11

TT

Quasi-static

-

63

±70 VDC

20°

2024

Yang et al.117.

AlScN

D = 10 mm

25 × 25

TTP

Quasi-static

Resonant

1011

47

794

±90 VDC

90 VAC

0.6° (X/Y) 10°

2024

Zhang et al.118.

Al0.904Sc0.096N

5 × 5 mm2

5 × 5

TTP

Quasi-static

106

220

±50 VDC

8.8°

2024

Yang et al.119.

AlScN

D = 10 mm

25 × 25

TTP

Quasi-static

735

25

68 VDC

0.316° (5.52 mrad)

2025

Xue et al.120.

Al0.8Sc0.2N

D = 10 mm

26 × 22

TTP

Quasi-static

1230

40

±110 VDC

0.504° (8.4 mrad)

2022

Stoeckel et al.113.

Al0.68Sc0.32N

D = 1 mm

4 × 6

T

Quasi-static

2121

44

220 VDC

55.6°

2022

Liu et al.122.

AlScN

D = 1.5 mm

5.4 × 4.3

TT

Resonant

(X) 3187.1

(Y) 8187.5

127

30 VAC

(X) 22.6° / (Y) 4.1°

2024

Huang et al.121.

AlScN

D = 5 mm

10 × 10

TT

Resonant

(X) 816

(Y) 928

445

45 Vpeak

(X) 21.0° / (Y) 24.4°

  1. 1DOF (degree of freedom): T (1D Tilting), TT (2D Tip-Tilt), TTP (2D Tip-Tilt + Piston)
  2. 2Figure of merit (FoM) values are calculated using mode-specific definitions: (1) For resonant-mode devices: FoM = mirror area (mm2) × optical scan angle (°) × resonant frequency (kHz), (2) For quasi-static devices: FoM = mirror area (mm2) × optical scan angle (°)
  3. 3VAC is used for resonant-type devices when the original paper does not specify the driving voltage. (Vpeak: maximum amplitude of the AC waveform)
  4. 4For consistent comparison, air environment was used instead of vacuum and water
  5. 5Simulated result; optical scan angle obtained from FEM simulation, not from measurement of a fabricated device