Fig. 2: MoTe2 devices and polarization-dependent photocurrent measurements.
From: Circular photocurrents in centrosymmetric semiconductors with hidden spin polarization
a Schematic experimental set-up for measuring helicity-dependent photocurrents. b, c Optical photographs of multilayer devices with different electrode configurations. d, e Photocurrents respectively measured from device in 2b/2c as rotation angle of the quarter wave plate is adjusted and spot a/b is illuminated. The error bars of Ipc represent the standard deviation. No bias or gate voltages is applied. Red curves were fitted by using Eq. (1).
