Fig. 3: Field-evolution of off-diagonal Raman tensor elements.
From: Magnetic field control over the axial character of Higgs modes in charge-density wave compounds
a Integrated scattering intensity of the CDW amplitude mode at 9.1 meV in GdTe3 as a function of out-of-plane field strength and light polarization with ein⊥ eout. At small fields, domain poling effects contribute, while at higher fields the axialness of the Higgs mode increases linearly with B, as indicated by the arrow on the right. Crystallographic axes are indicated at the top. All data was acquired at T = 2 K. b Field-dependent Raman tensor element β extracted from fits to the integrated intensity plotted in panel (a). The standard deviation for each fitted value is within the size of the symbols. The data at B = 0 has been omitted due to ambiguity in fitting (see Supplementary Note 7 and Supplementary Figs. 8–11 for details). The dashed line is a guide to the eyes. The field regime dominated by field-poling effects is indicated by a shaded background. c–f Field- and polarization angle dependence of the Raman scattering intensity for four selected modes (10.8 meV, 12 meV, 15 meV, and 17 meV) measured with ein⊥ eout at T = 2 K.
