Fig. 1: Structure and characterization of GaON/GaN NWs. | Nature Communications

Fig. 1: Structure and characterization of GaON/GaN NWs.

From: Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires

Fig. 1

a 30° tilt angle scanning electron microscope (SEM) images of GaON/GaN NWs on Si. The red frame shows the core-shell structure diagram of a single GaON/GaN heterojunction NW. The yellow frame marks the region of transmission electron microscope (TEM) testing. b TEM images of the top region for single GaON/GaN NW on Si with a white dotted wire frame encircling the region of the GaON layer at the top of the NW. c Photoluminescence (PL) spectrum at room temperature of GaN and GaON/GaN material. d The charge transport process and chemical reaction diagram of GaN and GaON/GaN NWs under illumination. The bending arrows denote the process of oxygen evolution reactions (OER). e The X-ray photoelectron spectroscopy (XPS) spectra of the pristine GaN and the GaON material obtained after oxidation reconstruction. The valence band (VB) offset of GaON/GaN heterojunction is determined by the VB spectrum and the peak position of N 1 s. The black dotted line framed the position of the Ga LMM Auger spectrum. f O 1 s and g N 1 s core level spectra, N energy loss peak spectra of GaON material. h The energy band offset of GaON/GaN interface is described. CBM and VBM represent conduction band minimum and valence band maximum, respectively.

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