Table 2 The CP-EL performances of HF CP-OLEDs using (R)-OBN-XT-SXAC and (R)-OBN-XT-SFAC as sensitizers

Device	λ_EL (nm)^a	V_on (V)^b	L_max (cd m⁻²)^c	η_C (cd A⁻¹)^d	η_P (lm W⁻¹)^e	η_ext (%)^f	CIE_x,y^g	FWHM (nm)^h	g_EL (× 10⁻³)ⁱ
Device	λ_EL (nm)^a	V_on (V)^b	L_max (cd m⁻²)^c	maximum value / at 1000 cd m⁻²			CIE_x,y^g	FWHM (nm)^h	g_EL (× 10⁻³)ⁱ
(R)-HF1	470	2.9	21160	34.9/29.4	36.8/22.0	28.5/22.9	(0.13, 0.18)	20	2.93
(R)-HF2	542	2.9	10710	133.7/52.6	144.8/39.4	31.4/12.7	(0.32, 0.64)	42	1.31
(R)-HF3	470	3.3	10780	37.8/24.3	36.0/17.2	28.0/17.7	(0.13, 0.19)	20	1.55
(R)-HF4	470	3.4	15720	32.8/27.0	30.3/21.2	29.1/24.5	(0.12, 0.15)	19	1.59
(R)-HF5	540	3.0	11300	103.0/26.3	106.2/19.7	24.9/6.9	(0.30, 0.63)	42	1.29
(R)-HF6	538	3.0	22790	108.2/31.6	109.6/25.3	25.6/7.9	(0.29, 0.63)	43	1.24
(R)-T-HF1	470	6.5	16140	68.4/56.4	31.6/20.6	50.9/43.3	(0.13, 0.19)	20	4.87
(R)-T-HF2	540	5.3	20620	222.0/109.9	126.8/49.3	51.3/26.2	(0.28, 0.66)	39	2.43

EML of device (R)-HF1: 0.5 wt% v-DABNA: 20 wt% (R)-OBN-XT-SXAC: mCBP (20 nm). EML of device (R)-HF2: 1 wt% BN2: 20 wt% (R)-OBN-XT-SFAC: CBP (20 nm). EML of device (R)-HF3: 0.5 wt% v-DABNA: mCBP (10 nm)/20 wt% (R)-OBN-XT-SXAC: PPF (1 nm). EML of device (R)-HF4: 20 wt% (R)-OBN-XT-SXAC: PPF (1 nm)/0.5 wt% v-DABNA: mCBP (10 nm). EML of device (R)-HF5: 1 wt% BN2: CBP (10 nm)/20 wt% (R)-OBN-XT-SFAC: PPF (1 nm). EML of device (R)-HF6: 20 wt% (R)-OBN-XT-SFAC: PPF (1 nm)/1 wt% BN2: CBP (10 nm). EML of device (R)-T-HF1: 0.5 wt% v-DABNA: 20 wt% (R)-OBN-XT-SXAC: mCBP (20 nm) (blue tandem HF device). EML of device (R)-T-HF2: 1 wt% BN2: 20 wt% (R)-OBN-XT-SFAC: CBP (20 nm) (green tandem HF device).
^aEL peak wavelength.
^bTurn-on voltage at 1 cd m⁻².
^cMaximum luminance.
^dCurrent efficiency.
^ePower efficiency.
^fExternal quantum efficiency.
^gCommission Internationale de I’Eclairage coordinates.
^hFull width at half maximum.
ⁱEL dissymmetry factor.

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