Table 1 Structural parameters of the M-SRuM inductors and capacitors

From: Wafer-scale platform for on-chip 3D radio frequency lumped passive components using metal self-rolled-up membrane technique

Symbol

Description

\({{{{\boldsymbol{l}}}}}_{{{{\boldsymbol{s}}}}}\)

length of the strip

\({{{{\boldsymbol{l}}}}}_{{{{\boldsymbol{c}}}}}\)

length of the connecting line

\({{{{\boldsymbol{w}}}}}_{{{{\boldsymbol{s}}}}}\)

width of the strip

\({{{{\boldsymbol{t}}}}}_{{{{\boldsymbol{c}}}}}\)

the thickness of the copper layer

\({{{{\boldsymbol{t}}}}}_{{{{\boldsymbol{alo}}}}}\)

the thickness of aluminum oxide layer

\({{{\boldsymbol{N}}}}\)

number of turns

\({{{\boldsymbol{D}}}}\)

the outer diameter

\({{{{\boldsymbol{l}}}}}_{{{{\boldsymbol{if}}}}}\)

the length of the interdigital fingers

\({{{{\boldsymbol{w}}}}}_{{{{\boldsymbol{e}}}}}\)

the width of the electrode

\({{{{\boldsymbol{w}}}}}_{{{{\boldsymbol{if}}}}}\)

the width of interdigital fingers

\({{{{\boldsymbol{w}}}}}_{{{{\boldsymbol{gf}}}}}\)

the gap between interdigital fingers

\({{{{\boldsymbol{w}}}}}_{{{{\boldsymbol{gfe}}}}}\)

the gap between the interdigital finger and electrode