Fig. 2: Device scheme and simulation.
From: On-chip, inverse-designed active wavelength division multiplexer at THz frequencies
a Illustration of the planarized device structure with the active material surrounded by BCB. The device combines two sections: a 2.5 mm long lasing cavity and an electrically separated WDM section with surface-emitting broadband patch array antennas. b SEM image of the dry-etched WDM inverse-designed region before planarization. c Optical microscope image of a fully fabricated device. d 3D CST numerical simulation results for the transmission of the QCL section output to the WDM output ports.
