Fig. 6: Characteristics of fabricated PSF-based OLED device using ν-DABNA-M-B-Mes as emitter. | Nature Communications

Fig. 6: Characteristics of fabricated PSF-based OLED device using ν-DABNA-M-B-Mes as emitter.

From: Late-stage direct double borylation of B/N-based multi-resonance framework enables high-performance ultra-narrowband deep-blue organic light-emitting diodes

Fig. 6

a Device structure with the estimated energy levels of each component in eV. b Normalized EL spectra of the PSF device in operation. Inset: Electroluminescence, FWHM and the image of the fabricated device. c Commission Internationale d’Éclairage (CIE) (x,y) coordinates. d Current density (solid) and luminance (dashed) vs. driving voltage. e Current efficiency (solid) and Power efficiency (dashed) vs. luminance. f External quantum efficiency (EQE) vs. luminance.

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