Fig. 1: The schematic of the competition mechanism between FE and CT and the proposed polarity-dependent ferroelectric heterogeneous operation. | Nature Communications

Fig. 1: The schematic of the competition mechanism between FE and CT and the proposed polarity-dependent ferroelectric heterogeneous operation.

From: Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors

Fig. 1

a Hysteresis of non-volatile FE polarization dominated n-type and p-type FET. b The hysteresis of volatile CT dominated n-type and p-type FET. c The schematic of the FeFET structure utilized in the TCAD simulation with a FE layer with inherent electron trapping sites. d The transfer curves of simulated n-type MoS2 and p-type BP FeFET, exhibiting a semiconductor polarity-dependent macroscope ferroelectric control. e The comparison of electron trapping density in the ferroelectric layer of n-type MoS2 and p-type BP FeFET, respectively. f The schematic of the mechanism of the semiconductor polarity-dependent ferroelectric control in FeFET.

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