Fig. 4: Experiment validation of polarity-dependent macroscope ferroelectric in 2DFHT.

The double sweep transfer curve of a n-type MoS₂-based device, showing the CT induced clockwise hysteresis loop; b bipolar WSe₂ based device, showing the FE driven anticlockwise loop in p-region and CT induced clockwise loop in n-region; c p-type BP based device, showing the ferroelectric driven anticlockwise hysteresis loop, insert pictures are the microscope images of each 2DFHT device with a scale bar of 10 μm. The sweep range dependent transfer curves of d n-type MoS₂-based device, e p-region of WSe₂, showing transition of CT induced loop (below −40 V) to FE-driven loop (above −40 V); f p-type BP based device, exhibiting the same trend with Fig. 4e. g The volatile to non-volatile transition modulated by the amplitude of gate voltages, exhibiting a channel current modulation mode transition from CT control to FE control. h The combination of gate spike-dependent non-volatile memory and volatile weight update in WSe₂ 2DFHT.