Fig. 2: Ion-beam patterning of SrTiO3 substrates.
From: Defect engineering in BaSnO3 and SrSnO3 thin films through nanoscale substrate patterning
a, b Models illustrating patterning of the substrate surface using low-dose and high-dose Ga ions, and corresponding SEM images of such patterned lines on SrTiO3. Scale bars are 100 nm. c SEM images from patterned parallel lines on (001) SrTiO3 substrate, showing change of structure and increase of line width with increase of ion-dose (DI). The spacing between pattern lines is 900 nm. Scale bars are 500 nm. d Cross-sectional HAADF-STEM image of a line made with DI = 8.3 × 1017 ions/cm2, showing a shallow trenched channel. Dark contrast around the channel is due to amorphized SrTiO3. STEM-EDX maps show that the elemental composition of the patterned line is the same as that of the substrate. Scale bar is 20 nm. e, f Models illustrating structural modifications of the patterned ridges and channel lines after heat treatment. g HAADF-STEM images of patterned ridges on (001) SrTiO3 substrate, made with DI = 4.4 × 1016 ions/cm2, before and after ex-situ 650 °C heat treatment. Scale bar is 20 nm. Atomic-resolution images, from the boxed areas, show recrystallization of the amorphous patterned line. The brighter dots in the images are Pt particles from the Pt-weld migrated during heating. Scale bars are 2 nm.
