Fig. 6: Changes in the electronic band structure of the SrSnO3 film containing RP fault.
From: Defect engineering in BaSnO3 and SrSnO3 thin films through nanoscale substrate patterning
a DFT-calculated electronic band structure (left) and DOS (right) from bulk SrSnO3 film. b Calculated electronic band structure (left) and DOS (right) from the n = 5 RP structure based on relaxed atomic structure. The region highlighted in gray shows the region with considerable changes in the conduction band. c EELS O K-edges measured from RP fault and bulk SrSnO3 film with differences in the fine structure shown below (left). DFT-calculated O 2p- (right-top) and Sr 3d- (right-bottom) DOS from the RP fault and bulk SrSnO3. The main differences in EELS spectra and DOS are highlighted in gray matching observations in (b).
