Fig. 5: Inductance of the RuMi inductors with varied design parameters, and benchmarking of inductance density against literature counterparts.
a Measured inductance of the RuMi inductors for different conductor widths (wCu) and magnetic-structure widths (wPy). All devices have 4 cells, a 2.4 mm rolling length and 6 stacks of Py/Ta laminates. Error bars show mean ± s.d. (n = 3-4 samples for different wCu and wPy). b Measured inner diameter of the rolled-up structure versus the number of Py/Ta laminate stacks, with corresponding optical images (insets). Scale bars, 200 μm. Error bars show mean ± s.d. (n = 5 samples). c Inductance and Q-factor versus frequency for RuMi inductors with different stacks of Py/Ta laminates (Nstacks). All devices have 4 cells and a 3.6 mm rolling length. d Inductance and Q-factor versus frequency for RuMi inductors with different conductor widths (wCu). All devices have two cells and 2 mm rolling length, 600 nm thick of copper and one stacks of Py/Ta laminates. e Inductance and Q-factor versus frequency for RuMi inductors with different thickness of copper (tCu). All devices have two cells, 2 mm rolling length, 200 μm width of copper and one stacks of Py/Ta laminates. Source data are provided as a Source Data file. f Benchmark of maximum Q-factor (Qmax) multiplied by inductance density (D) versus frequency, comparing the RuMi inductors in this work with leading 2D or 3D CMOS-compatible magnetic-integrated microinductors17,41,42,44,45,46,47,48,49,50,51,52,53,54,55,56,57.
