Fig. 1: Accelerating electroluminescence in quantum dot light-emitting diodes (QD-LEDs) by carrier diffusion.
From: Hole migration enables efficient and ultra-bright green quantum dot LEDs
The schematic diagrams showing the exciton formation with (a) and without (b) carrier diffusion in the QD layer between electron transport layer (ETL) and hole transport layer (HTL). c The Monte Carlo simulated exciton formation number in the QD layer with/without carrier lateral migration (see “Method” for details). d The relationship between the exciton formation rate and carrier migration proportion under high/low carrier concentration conditions.
