Fig. 2: Identification of deep-level defects in neutron-irradiated Si.

a Evolution in numbers of different types of defects during neutron irradiation at 300 K (the shaded region) and annealing at 350 K (the unshaded region). b Defect spatial distribution in a one-micrometer cube in the steady state after neutron irradiation and annealing. c Energy levels and surviving numbers per cascade of the concerned deep-level defects after neutron irradiation and annealing. d Time-dependent charge-state conversion ratios (solid lines) and potential energy barriers (the red dashed line) by electron capture in Process Ⅱ (the light green region), and time-dependent charge-state conversion ratios (solid lines) by electron emission in Process Ⅲ (the light yellow region) at different temperatures for V₂(=/−). The dashed lines between two color regions indicate the time break. e Simulated and experimental DLTS of the base-collector of the Si bipolar transistor after neutron irradiation and annealing (Experimental data is reproduced from ref. ³³). The explanations of all defect notations can be found in Irradiation and annealing simulations in “Methods” section.