Fig. 4: Expanded understanding of deep-level defects in 4H-SiC through defect evolution under different conditions and DLTS simulations with different dimensions of defect parameters.
From: Multidimensional defect identification of semiconductors in nonequilibrium
DLTS of 4H-SiC in equilibrium (a) and nonequilibrium (b) with two-dimensional parameters of \((\Delta E,\sigma )\). c,d DLTS of a 4H-SiC JBS diode after 1 MeV neutron irradiation with the fluence of 6.6×1013 cm-2 and annealing at 300 K with three-dimensional parameters of \((\Delta E,\sigma,C)\) (c) at 623 K with the extra dimensional parameter of T (d). Here, the experimental DLTS of the 4H-SiC JBS diode is taken from ref. 7. Defect evolution during annealing at 300 (e) and 623 K (f). Two stages of evolution occur for both temperatures: (Ⅰ) athermal defect reactions, including I-V recombination and cluster formation like VCVC and VSiVC, and (Ⅱ) thermal defect reactions, including I-V recombination and clustering. An extra stage (Ⅲ) of defect evolution occurs at 623 K, that is, the formation of antisite defects including CSi and CSiVC (CAV). The thicker dashed lines are used to highlight the defects that appear (CSi and CAV) or disappear (VSi) at the higher annealing temperature. The explanations of all defect notations can be found in Irradiation and annealing simulations in “Methods” section.
