Table 1 Identification of typical deep levels in 4H-SiC in equilibrium and nonequilibrium with different dimensional parameters
From: Multidimensional defect identification of semiconductors in nonequilibrium
Ⅰ | Ⅱ | Ⅲ | Ⅳ | |
|---|---|---|---|---|
EH1/S1 | VCVC( = / − )/CAV(=/−)/ SiCVSi(=/−)/SiCVSi(−/0) | VCVC(=/−) | VCVC( = / − )/CAV(=/−) | |
Z1/2 | VC( = /0) | VC( = /0) | VC( = /0) | VC( = /0) |
EH3/S2 | VCVC( − /0)/VSi(=/−)/CAV(−/0) | VCVC( − /0) | VCVC( − /0)/CAV(−/0) | |
EH4 | VCVC( − /0)/VSi(=/−)/ CAV(−/0)/CAV(0/+) | VSi(=/−) | ||
EH5 | VSi(=/−)/CAV(−/0)/CAV(0/+) | CAV(0/+) | ||
EH6/7 | VSiVC(=/0) | VSiVC(=/0) | VSiVC(=/0) |
