Fig. 2: Principle and design of the device.
From: Ultrafast avalanche photodiode exceeding 100 GHz bandwidth
a The cross-section of junction region and the theoretical electric field distribution in the uni-multiplication-carrier avalanche photodiode and conventional avalanche photodiode. A, absorption. C, charge. M, multiplication. Pcon, P connect. Ncon, N connect. b The three-dimensional structure of the uni-multiplication-carrier avalanche photodiode. c The simulated electric field under different charge layer doping concentrations at −8 V. d The simulated bandwidth under various geometrical dimensions with optimal inductances. e The simulated bandwidth as a function of inductance.
