Fig. 2: Measured electrical characteristics of CMOS process-compatible TaOX/Ta2O5 memristors with different O2/Ar gas mixture ratios in TaOX. | Nature Communications

Fig. 2: Measured electrical characteristics of CMOS process-compatible TaOX/Ta2O5 memristors with different O2/Ar gas mixture ratios in TaOX.

From: Demonstration of CMOS-compatible memristor-based electrochemical biosensor transducer with threshold-sensing functionality

Fig. 2: Measured electrical characteristics of CMOS process-compatible TaOX/Ta2O5 memristors with different O2/Ar gas mixture ratios in TaOX.

a–c Measured I–V curves, LRS/HRS resistances, and on/off ratios of the memristors based on 40 nm-thick TaOX layers with O2/Ar gas mixture ratios of 9 (S1), 6 (S2), and 3% (S3). The thickness of Ta2O5 layers in S1–S3 species is 4 nm. For each species, ten devices were randomly selected on an 8-inch wafer. LRS/HRS resistances were measured at a read voltage of 0.3 V.

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