Table 1 Materials and simulation parameters

From: Quantification and prediction of solidification textures under additive manufacturing conditions

Symbol

Description

Value

c

Nominal composition of Si

1 wt.%

me

Liquidus slope

− 6.5 K/wt.%38

ke

Partition coefficient

0.1338

Γ

Gibbs-Thomson coefficient

1.96 × 10−7 K m59

\({\mu }_{k}^{0}\)

Interface kinetic coefficient

0.5 m/(s K)23

Dl

Liquid diffusion coefficient

5.5 × 10−9 m2/s60

G

Temperature gradient

1 × 106 K/m35

Vp

Pulling velocity

1 m/s

W0

Atomic interface width

1 nm

ϵk

Anisotropic strength of the kinetic coefficient

0.15

ϵ1

First-order parameter of the anisotropic strength of interfacial free energy

0.06

ϵ2

Second-order parameter of the anisotropic strength of interfacial free energy

− 0.006 or 0

W

Interface width

5 W0

Δx

Grid spacing

0.8 W

Δt

Time step of evolution

0.08 \({W}^{2}/(\Gamma {\mu }_{k}^{0})\)