Fig. 3: Investigation of the role of tBP in the LODT process and optimization of HTL via its partial replacement with THF in different volume ratio.

a UV-Vis-NIR absorbance intensity changes of LODT-NH4TFSI solutions prepared with different tBP to THF volume ratios, measured at wavelengths of 522 nm (light-colored bars) and 1521 nm (dark-colored bars). b Fermi level (EF) and the onset edge of the HOMO (EHOMO) positions and their differences ( | EF–EHOMO (eV) |, with respect to the vacuum level, Evacuum) of the corresponding LODT-HTL films as a function of the tBP:THF volume ratios. c Conductivity of LODT-HTL films with varying tBP concentrations (device structure of FTO/PEDOT:PSS/LODT-HTL/Au with an electrode area of 0.16 cm2). d Glass transition temperature (Tg) of the solid LODT-HTL and the relative intensity of the PbI2 diffraction peak (2θ = 12.6°) under normalized intensity of the perovskite (110) peak from the XRD patterns as a function of tBP:THF ratio.