Fig. 2: Controlled synthesis and characterization of Co triangular orders.
From: Triangular-ordered Co atoms activate substrates for ampere-level durable hydrogen production
Schematic illustration of the photo-induced in-lattice self-assembly and out-of-lattice adsorption for O-Co/VN (a) and SS-Co/VN (b), respectively. Note that three key points guide the precise synthesis of triangular Co orders: deep-level vacancies, the strong affinity of Co atoms to deep-level vacancies, and in-lattice migration. εd denotes the d-band center. c 3D atomic model with random-depth-doped-Co in the VN supports viewing from direction of <110>. d The pristine STEM-HAADF image of the O-Co/VN sample after the denoised process. e Pixelated intensity distribution analysis of (d). f Atomic-resolution HAADF-STEM image of O-Co/VN processed with Wiener filtering. Green rectangle highlights the region for atomic EELS mapping. g EELS spectra of Co L-edge (top) and V L-edge (bottom). h Elemental maps of Co species acquired from the green square region in (f), confirming the presence of the Co-triangular orders in VN support. Source data for the panel g are provided as a Source Data file.
