Fig. 3: The device performances and spin configuration switching diagram of the even-even AFMTJ. | Nature Communications

Fig. 3: The device performances and spin configuration switching diagram of the even-even AFMTJ.

From: Interface-controlled antiferromagnetic tunnel junctions based on a metallic van der Waals A-type antiferromagnet

Fig. 3: The device performances and spin configuration switching diagram of the even-even AFMTJ.

a Temperature-dependent TMR behavior of even-even device D1 at fixed current of 20 nA. The range of sweep field is ±4 T. The ascending and descending magnetic field sweeps are colored by orange and green, respectively. BC1 and BC2 are defined by the magnetic field at half peak height where the TMR effect respectively emerges and vanishes during field ascending. b Temperature-dependent maximum TMR ratio (TMR_max) and TMR ratio at zero field (TMR_ZF). c Temperature-dependent BC1 and BC2. d Left: TMR ratio as a function of magnetic field for device D1 at 10 K. Right: Schematic of spin configuration switching with applied magnetic field. A 4-layer spin configuration is used to represent even-numbered layers. The full-loop (±4 T) scan is denoted by solid orange-green arrows. The half-loop (±1.5 T) scan is represented by dashed orange-green arrows.

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