Fig. 4: Formation of Schottky Heterointerface and mechanism underlying interfacial charge transport.
a, b The work function (WF) and band gap (Eg) of SiOC and UHTC borides, respectively. c Schematic illustration of electric transport before and after contact, where Evac, EF, Ec, and Ev represent the vacuum level, Fermi level, conduction band, and valence band, respectively. d Schematic diagram illustrating that the WF difference between PDC-SiOC and UHTC borides leads to the formation of a space charge region and the associated built-in electric field (BIEF) at their heterogeneous interface upon contact. e The schematic illustrates the mechanism underlying interfacial charge transport in scenarios where the applied electric field is oriented along and opposite to the original BIEF. FS, FE, and FB represent the driving force from the Schottky contact, external field, and BIEF, respectively.
