Fig. 4: Electric-magnetic control of the nonpolar \({{{{\mathcal{PT}}}}}\)-symmetric antiferromagnetic order.

a SEM image of the neighbouring devices. The interlayer resistivity in device #1 was measured between terminals 2–3, while in device #2, it was measured between terminals 1–2. b Schematic showing the direction of the electric current (I) along [001] and the magnetic field (B) along [110] for domain poling. c, d φ dependence of \({\rho }_{zz}^{2\omega }(\phi )\) in devices #1 (c) and #2 (d) at 1.5 K and 12 T for Iz = 200 μA before domain poling. e, f Corresponding \({\rho }_{zz}^{2\omega }(\phi )\) profiles for devices #1 (e) and #2 (f) after domain poling by current-field cooling, showing an inversion of the peak and dip positions in device #1. The insets illustrate the domain of antiferromagnetic order in the Mn-Bi layers of each device.