Fig. 1: Characterization of CdS/Ta2O5 buffer layers. | Nature Communications

Fig. 1: Characterization of CdS/Ta2O5 buffer layers.

From: Field-effect passivation for minimized voltage loss in highly efficient antimony selenosulfide solar cells

Fig. 1: Characterization of CdS/Ta2O5 buffer layers.The alternative text for this image may have been generated using AI.

a Reaction schematic and XRD pattern of Ta2O5 (The inset shows the precursor solution of Ta2O5). b, e Scanning electron microscopy (SEM) images, c, f atomic force microscopy (AFM) mappings, and d hydrophilicity measurements of CdS and CdS/Ta2O5 films. g I–V characteristics of FTO/CdS/Au and FTO/CdS/Ta2O5/Au devices for conductivity evaluation.

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