Fig. 5: Device performance.
From: In-situ entropic ligand engineering enables high-efficiency quantum dot solar cells
a Schematic of N-i-P structure and corresponding cross-sectional SEM image of FAPbI3 PQD solar cells. b J-V curves of best-performing OA and DEHP-capped FAPbI3 PQD devices measured under the AM 1.5 G solar spectrum at 100 mW cm-2, the inset shows the PCE distribution for 15 individual solar cells. c EQE and SPO curves of optimal OA and FDEHP -capped FAPbI3 PQD devices. d Nyquist plots and e light intensity-dependent VOC plots of OA- and DEHP-based FAPbI3 PQD devices. f Long-term stability of unencapsulated FAPbI3 PQD solar cells monitored under ambient conditions with a relative humidity between 20 and 30%. g MPP tracking of OA- and DEHP-based devices (unencapsulated) measured under 1-sun illumination (100 mW cm−2) and ambient conditions (temperature of ~50 °C and relative humidity of 20–30%).
