Fig. 3: Gate-tunable lateral spin valve in CrSBr induced by local interfacial charge transfer from graphene.
From: Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr
a Schematic of the CrSBr lateral spin-valve with graphene contacts on a 285 nm SiO2/Si substrate. The global back-gate voltage VG is applied to the doped Si substrate; VDS is applied between the graphene source and drain electrodes. b Optical image of a trilayer CrSBr device with graphene contacts (Sample D2). Scale bar: 5 μm. c Transfer curves of the pristine graphene and graphene in contact with the CrSBr flake in Sample D2 measured at 2 K. d MR of the same CrSBr device measured with VDS = 0.48 V and VG = - 40 V at 2 K. The inset cartoons illustrate the corresponding magnetic configurations for resistance states “0” to “4” as the magnetic field sweeps forward (red curve) along the b-axis. The coercive field of the source Gr/CrSBr contact slightly differs from that of the drain contact, forming parallel (state “1” or “3”) and antiparallel (state “2”) magnetic configurations as the field sweeps, thus causing the spin-valve effect. e Spin-valve MR of the same device as VG changes from - 90 V to 80 V with a fixed VDS = 0.48 V, at 2 K with magnetic field B oriented along the b-axis. It clearly shows a sign change of the spin-valve MR when adjusting VG across - 72 V.
